Add to like
Add to project list
  • Manufacturer No:
    SI7108DN-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    278317
  • Description:
    MOSFET N-CH 20V 14A 1212-8
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:8959
  • Qty Unit Price price
  • 1 $1962.582 $1962.582
  • 10 $1943.15 $19431.5
  • 100 $1923.91 $192391
  • 1000 $1904.861 $1904861
  • 10000 $1886 $18860000

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    SI7108DN-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI7108DN-T1-GE3
  • SKU:
    278317
  • Description:
    MOSFET N-CH 20V 14A 1212-8

SI7108DN-T1-GE3 Details

MOSFET N-CH 20V 14A 1212-8

SI7108DN-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Number of Terminations: 5
  • Time@Peak Reflow Temperature-Max (s): 30
  • Published: 2009
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 16V
  • Threshold Voltage: 2V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Terminal Form: C BEND
  • Length: 3.05mm
  • Turn On Delay Time: 10 ns
  • Rise Time: 10 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Series: TrenchFET?
  • Vgs (Max): ±16V
  • Height: 1.04mm
  • Additional Feature: ULTRA-LOW RESISTANCE
  • JESD-30 Code: S-XDSO-C5
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Avalanche Energy Rating (Eas): 24 mJ
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Pin Count: 8
  • Peak Reflow Temperature (Cel): 260
  • Terminal Finish: Matte Tin (Sn)
  • Factory Lead Time: 14 Weeks
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Power Dissipation: 1.5W
  • Continuous Drain Current (ID): 22A
  • Case Connection: DRAIN
  • Width: 3.05mm
  • Fall Time (Typ): 10 ns
  • Pulsed Drain Current-Max (IDM): 60A
  • Turn-Off Delay Time: 60 ns
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Subcategory: FET General Purpose Powers
  • Power Dissipation-Max: 1.5W Ta
  • Package / Case: PowerPAK? 1212-8
  • Current - Continuous Drain (Id) @ 25°C: 14A Ta
  • Drain-source On Resistance-Max: 0.0049Ohm
  • Rds On (Max) @ Id, Vgs: 4.9m Ω @ 22A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via