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- Manufacturer No：IRFIBC30G
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFIBC30G
- SKU：279116
- Description：MOSFET N-CH 600V 2.5A TO220FP
User Guide
User Guide
IRFIBC30G Details
MOSFET N-CH 600V 2.5A TO220FP
IRFIBC30G Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 600V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Current Rating: 2.5A
- Vgs (Max): ±20V
- Turn-Off Delay Time: 35 ns
- Width: 4.8mm
- Turn On Delay Time: 11 ns
- Output Power: 35W
- Fall Time (Typ): 14 ns
- Length: 10.6mm
- Rise Time: 13ns
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance: 660pF
- Rds On Max: 2.2 Ω
- Mounting Type: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 600V
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 2.5A
- Supplier Device Package: TO-220-3
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain to Source Resistance: 2.2Ohm
- Power Dissipation: 35W
- Height: 9.8mm
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Weight: 6.000006g
- Power Dissipation-Max: 35W Tc
- Current - Continuous Drain (Id) @ 25°C: 2.5A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.5A, 10V
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