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- Manufacturer No：SI2323DS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2323DS-T1-GE3
- SKU：281690
- Description：MOSFET P-CH 20V 3.7A SOT23-3
User Guide
User Guide
SI2323DS-T1-GE3 Details
MOSFET P-CH 20V 3.7A SOT23-3
SI2323DS-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Part Status: Not For New Designs
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Gate to Source Voltage (Vgs): 8V
- Turn On Delay Time: 25 ns
- Height: 1.02mm
- Series: TrenchFET?
- Vgs (Max): ±8V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Threshold Voltage: -1V
- Resistance: 39mOhm
- Fall Time (Typ): 43 ns
- Nominal Vgs: -1 V
- Power Dissipation-Max: 750mW Ta
- Current - Continuous Drain (Id) @ 25°C: 3.7A Ta
- Continuous Drain Current (ID): -4.7A
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Published: 2015
- REACH SVHC: Unknown
- Drain to Source Voltage (Vdss): 20V
- Factory Lead Time: 19 Weeks
- Power Dissipation: 750mW
- Width: 1.4mm
- Package / Case: TO-236-3, SC-59, SOT-23-3
- FET Type: P-Channel
- Drain to Source Breakdown Voltage: -20V
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Length: 3.04mm
- Weight: 1.437803g
- Supplier Device Package: SOT-23-3 (TO-236)
- Drain to Source Resistance: 39mOhm
- Turn-Off Delay Time: 71 ns
- Rise Time: 43ns
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
- Rds On Max: 39 mΩ
- Input Capacitance: 1.02nF
- Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
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