SI1016X-T1-GE3Vishay Siliconix
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    • Manufacturer No：
      SI1016X-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      Get the PDF file
    • SKU：
      281710
    • Description：
      N/P Channel 20 V 0.41/0.7 Ohm 250 mW SMT Power Mosfet - SC-89-6
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    Inventory:18459
    • Qty Unit Price price
    • 1 $73.886 $73.886
    • 10 $73.154 $731.54
    • 100 $72.429 $7242.9
    • 1000 $71.711 $71711
    • 10000 $71 $710000

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    • Manufacturer No：
      SI1016X-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI1016X-T1-GE3
    • SKU：
      281710
    • Description：
      N/P Channel 20 V 0.41/0.7 Ohm 250 mW SMT Power Mosfet - SC-89-6

    User Guide

    User Guide

    SI1016X-T1-GE3 Details

    N/P Channel 20 V 0.41/0.7 Ohm 250 mW SMT Power Mosfet - SC-89-6

    SI1016X-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Number of Terminations: 6
    • Pin Count: 6
    • Max Power Dissipation: 250mW
    • Terminal Finish: Matte Tin (Sn)
    • Factory Lead Time: 14 Weeks
    • Drain to Source Breakdown Voltage: 20V
    • Operating Temperature: -55°C~150°C TJ
    • Width: 1.2mm
    • Transistor Application: SWITCHING
    • Subcategory: Other Transistors
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • FET Feature: Logic Level Gate
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • FET Type: N and P-Channel
    • Additional Feature: LOW THRESHOLD
    • Continuous Drain Current (ID): 485mA
    • Rds On (Max) @ Id, Vgs: 700m Ω @ 600mA, 4.5V
    • Current - Continuous Drain (Id) @ 25°C: 485mA 370mA
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Published: 2016
    • Number of Pins: 6
    • Peak Reflow Temperature (Cel): 260
    • Power Dissipation: 250mW
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 6V
    • Height: 600μm
    • Terminal Form: FLAT
    • Operating Mode: ENHANCEMENT MODE
    • Length: 1.7mm
    • Resistance: 700mOhm
    • Series: TrenchFET?
    • Package / Case: SOT-563, SOT-666
    • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
    • Weight: 32.006612mg
    • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
    • Drain Current-Max (Abs) (ID): 0.485A
    • Base Part Number: SI1016
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