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- Manufacturer No：SI3456DDV-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3456DDV-T1-E3
- SKU：282044
- Description：MOSFET N-CH 30V 6.3A 6TSOP
User Guide
User Guide
SI3456DDV-T1-E3 Details
MOSFET N-CH 30V 6.3A 6TSOP
SI3456DDV-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Published: 2016
- Number of Pins: 6
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Continuous Drain Current (ID): 5A
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Width: 1.65mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Fall Time (Typ): 13 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Weight: 19.986414mg
- Current - Continuous Drain (Id) @ 25°C: 6.3A Tc
- Power Dissipation-Max: 1.7W Ta 2.7W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Drain Current-Max (Abs) (ID): 5A
- Transistor Element Material: SILICON
- Height: 1mm
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Length: 3.05mm
- Turn On Delay Time: 12 ns
- Resistance: 40mOhm
- Rise Time: 13 ns
- Turn-Off Delay Time: 16 ns
- Power Dissipation: 1.7W
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Rds On (Max) @ Id, Vgs: 40m Ω @ 5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
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