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- Manufacturer No：SI1305DL-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1305DL-T1-E3
- SKU：282258
- Description：Trans MOSFET P-CH 8V 0.86A 3-Pin SC-70 T/R
User Guide
User Guide
SI1305DL-T1-E3 Details
Trans MOSFET P-CH 8V 0.86A 3-Pin SC-70 T/R
SI1305DL-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Package / Case: SC-70, SOT-323
- Fall Time (Typ): 55 ns
- Series: TrenchFET?
- Vgs (Max): ±8V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Drain to Source Resistance: 530mOhm
- Supplier Device Package: SC-70-3
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Threshold Voltage: -450mV
- Nominal Vgs: -450 mV
- Rds On (Max) @ Id, Vgs: 280mOhm @ 1A, 4.5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Published: 2015
- REACH SVHC: Unknown
- Operating Temperature: -55°C~150°C TJ
- Gate to Source Voltage (Vgs): 8V
- FET Type: P-Channel
- Turn On Delay Time: 8 ns
- Rise Time: 55ns
- Turn-Off Delay Time: 17 ns
- Resistance: 280mOhm
- Drain to Source Breakdown Voltage: -8V
- Power Dissipation: 340mW
- Rds On Max: 280 mΩ
- Vgs(th) (Max) @ Id: 450mV @ 250μA (Min)
- Power Dissipation-Max: 290mW Ta
- Current - Continuous Drain (Id) @ 25°C: 860mA Ta
- Continuous Drain Current (ID): -920mA
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