SI7846DP-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI7846DP-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      282294
    • Description：
      MOSFET N-CH 150V 4A PPAK SO-8
    • Quantity：
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    Inventory:17431
    • Qty Unit Price price
    • 1 $2.447 $2.447
    • 10 $2.422 $24.22
    • 100 $2.398 $239.8
    • 1000 $2.374 $2374
    • 10000 $2.35 $23500

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    • Manufacturer No：
      SI7846DP-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI7846DP-T1-E3
    • SKU：
      282294
    • Description：
      MOSFET N-CH 150V 4A PPAK SO-8

    User Guide

    User Guide

    SI7846DP-T1-E3 Details

    MOSFET N-CH 150V 4A PPAK SO-8

    SI7846DP-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Pin Count: 8
    • Published: 2016
    • Number of Terminations: 5
    • Drain to Source Breakdown Voltage: 150V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Factory Lead Time: 14 Weeks
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Threshold Voltage: 4.5V
    • Drain Current-Max (Abs) (ID): 4A
    • Length: 4.9mm
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Terminal Form: C BEND
    • Subcategory: FET General Purpose Power
    • Turn On Delay Time: 12 ns
    • Rise Time: 7 ns
    • Turn-Off Delay Time: 22 ns
    • Continuous Drain Current (ID): 6.7A
    • Vgs(th) (Max) @ Id: 4.5V @ 250μA
    • Weight: 506.605978mg
    • Width: 5.89mm
    • Current - Continuous Drain (Id) @ 25°C: 4A Ta
    • Power Dissipation-Max: 1.9W Ta
    • Rds On (Max) @ Id, Vgs: 50m Ω @ 5A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Peak Reflow Temperature (Cel): 260
    • Terminal Finish: Matte Tin (Sn)
    • Dual Supply Voltage: 150V
    • Max Junction Temperature (Tj): 150°C
    • REACH SVHC: Unknown
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Pulsed Drain Current-Max (IDM): 50A
    • Case Connection: DRAIN
    • Resistance: 50mOhm
    • Fall Time (Typ): 7 ns
    • Height: 1.12mm
    • Series: TrenchFET?
    • Package / Case: PowerPAK? SO-8
    • Power Dissipation: 1.9W
    • Additional Feature: FAST SWITCHING
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • JESD-30 Code: R-XDSO-C5
    • Nominal Vgs: 4.5 V
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