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- Manufacturer No：SI4936CDY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4936CDY-T1-GE3
- SKU：283144
- Description：MOSFET 2N-CH 30V 5.8A 8-SOIC
User Guide
User Guide
SI4936CDY-T1-GE3 Details
MOSFET 2N-CH 30V 5.8A 8-SOIC
SI4936CDY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Threshold Voltage: 3V
- Published: 2009
- Drain Current-Max (Abs) (ID): 5A
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- Height: 1.55mm
- Resistance: 40mOhm
- Rise Time: 13 ns
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- Current - Continuous Drain (Id) @ 25°C: 5.8A
- Power Dissipation: 2.3W
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Base Part Number: SI4936
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 8
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Continuous Drain Current (ID): 5A
- Length: 5mm
- Drain to Source Breakdown Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time: 12 ns
- Fall Time (Typ): 13 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Turn-Off Delay Time: 16 ns
- FET Type: 2 N-Channel (Dual)
- Max Power Dissipation: 2.3W
- Weight: 186.993455mg
- Rds On (Max) @ Id, Vgs: 40m Ω @ 5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
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