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- Manufacturer No：IRFD9210
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD9210
- SKU：283809
- Description：MOSFET P-CH 200V 0.4A 4-DIP
User Guide
User Guide
IRFD9210 Details
MOSFET P-CH 200V 0.4A 4-DIP
IRFD9210 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Packaging: Tube
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- Length: 5mm
- Operating Temperature: -55°C~150°C TJ
- Vgs (Max): ±20V
- Drain to Source Resistance: 3Ohm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 8 ns
- Turn-Off Delay Time: 11 ns
- Power Dissipation-Max: 1W Ta
- Drain to Source Breakdown Voltage: -200V
- Height: 3.37mm
- Width: 6.29mm
- Current - Continuous Drain (Id) @ 25°C: 400mA Ta
- Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 4
- Published: 2012
- Power Dissipation: 1W
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 400mA
- FET Type: P-Channel
- Fall Time (Typ): 12 ns
- Rise Time: 12ns
- Package / Case: 4-DIP (0.300, 7.62mm)
- Rds On Max: 3 Ω
- Input Capacitance: 170pF
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
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