SI4431BDY-T1-E3Vishay Siliconix
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    SI4431BDY-T1-E3123
    • Manufacturer No：
      SI4431BDY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      284688
    • Description：
      MOSFET P-CH 30V 5.7A 8-SOIC
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    • Qty Unit Price price
    • 1 $0.419 $0.419
    • 10 $0.414 $4.14
    • 100 $0.409 $40.9
    • 1000 $0.404 $404

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    SI4431BDY-T1-E3
    • Manufacturer No：
      SI4431BDY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI4431BDY-T1-E3
    • SKU：
      284688
    • Description：
      MOSFET P-CH 30V 5.7A 8-SOIC

    User Guide

    User Guide

    SI4431BDY-T1-E3 Details

    MOSFET P-CH 30V 5.7A 8-SOIC

    SI4431BDY-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Pin Count: 8
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Time@Peak Reflow Temperature-Max (s): 30
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Length: 5mm
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Height: 1.75mm
    • Power Dissipation: 1.5W
    • Vgs (Max): ±20V
    • Rise Time: 10 ns
    • FET Type: P-Channel
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Drain to Source Breakdown Voltage: -30V
    • Drain Current-Max (Abs) (ID): 5.7A
    • Fall Time (Typ): 47 ns
    • Power Dissipation-Max: 1.5W Ta
    • Nominal Vgs: -1 V
    • Continuous Drain Current (ID): -7.5A
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Max Junction Temperature (Tj): 150°C
    • Published: 2009
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • Width: 4mm
    • Resistance: 30mOhm
    • Terminal Finish: MATTE TIN
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Turn On Delay Time: 10 ns
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Turn-Off Delay Time: 70 ns
    • Series: TrenchFET?
    • Dual Supply Voltage: -30V
    • Threshold Voltage: -1V
    • Weight: 186.993455mg
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
    • Current - Continuous Drain (Id) @ 25°C: 5.7A Ta
    • Rds On (Max) @ Id, Vgs: 30m Ω @ 7.5A, 10V
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