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- Manufacturer No：SI7459DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7459DP-T1-GE3
- SKU：285061
- Description：MOSFET P-CH 30V 13A PPAK SO-8
User Guide
User Guide
SI7459DP-T1-GE3 Details
MOSFET P-CH 30V 13A PPAK SO-8
SI7459DP-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Pin Count: 8
- Published: 2016
- Number of Terminations: 5
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Terminal Form: C BEND
- Case Connection: DRAIN
- Turn On Delay Time: 25 ns
- FET Type: P-Channel
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Vgs (Max): ±25V
- Terminal Finish: PURE MATTE TIN
- Turn-Off Delay Time: 180 ns
- JESD-30 Code: R-XDSO-C5
- Power Dissipation-Max: 1.9W Ta
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Continuous Drain Current (ID): 13A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Pulsed Drain Current-Max (IDM): 60A
- Fall Time (Typ): 20 ns
- Rise Time: 20ns
- Series: TrenchFET?
- Package / Case: PowerPAK? SO-8
- Power Dissipation: 1.9W
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 13A Ta
- Rds On (Max) @ Id, Vgs: 6.8m Ω @ 22A, 10V
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