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SI7309DN-T1-GE3123
  • Manufacturer No:
    SI7309DN-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    288247
  • Description:
    MOSFET 60V 8.0A 19.8W 115mohm @ 10V
  • Quantity:
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Inventory:4943
  • Qty Unit Price price
  • 1 $1.044 $1.044
  • 10 $1.033 $10.33
  • 100 $1.022 $102.2
  • 1000 $1.011 $1011
  • 10000 $1 $10000

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SI7309DN-T1-GE3
  • Manufacturer No:
    SI7309DN-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI7309DN-T1-GE3
  • SKU:
    288247
  • Description:
    MOSFET 60V 8.0A 19.8W 115mohm @ 10V

SI7309DN-T1-GE3 Details

MOSFET 60V 8.0A 19.8W 115mohm @ 10V

SI7309DN-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Drain to Source Voltage (Vdss): 60V
  • Time@Peak Reflow Temperature-Max (s): 40
  • REACH SVHC: Unknown
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: Other Transistors
  • Turn On Delay Time: 10 ns
  • Rise Time: 15 ns
  • Turn-Off Delay Time: 30 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Threshold Voltage: -3V
  • Drain to Source Breakdown Voltage: -60V
  • Current - Continuous Drain (Id) @ 25°C: 8A Tc
  • Package / Case: PowerPAK? 1212-8
  • Continuous Drain Current (ID): -8A
  • Power Dissipation-Max: 3.2W Ta 19.8W Tc
  • Rds On (Max) @ Id, Vgs: 115m Ω @ 3.9A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Pin Count: 8
  • Peak Reflow Temperature (Cel): 260
  • Number of Terminations: 5
  • Factory Lead Time: 14 Weeks
  • Published: 2005
  • Element Configuration: Single
  • Pulsed Drain Current-Max (IDM): 20A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Terminal Form: C BEND
  • Case Connection: DRAIN
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • FET Type: P-Channel
  • Drain Current-Max (Abs) (ID): 3.9A
  • Series: TrenchFET?
  • Fall Time (Typ): 33 ns
  • Power Dissipation: 3.2W
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Resistance: 115mOhm
  • JESD-30 Code: S-XDSO-C5
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V

Excellent

Based on reviews

Excellent

Based on reviews

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