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- Manufacturer No：SI7114DN-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7114DN-T1-E3
- SKU：290243
- Description：Single N-Channel 30 V 7.5 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8
User Guide
User Guide
SI7114DN-T1-E3 Details
Single N-Channel 30 V 7.5 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8
SI7114DN-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- Published: 2016
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 30
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Threshold Voltage: 1V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Length: 3.05mm
- Turn On Delay Time: 10 ns
- Rise Time: 10 ns
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Subcategory: FET General Purpose Powers
- Resistance: 7.5mOhm
- Power Dissipation-Max: 1.5W Ta
- JESD-30 Code: S-XDSO-C5
- Continuous Drain Current (ID): 18.3A
- Current - Continuous Drain (Id) @ 25°C: 11.7A Ta
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- DS Breakdown Voltage-Min: 1V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 1.5W
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Width: 3.05mm
- Fall Time (Typ): 10 ns
- Pulsed Drain Current-Max (IDM): 60A
- Turn-Off Delay Time: 45 ns
- Series: TrenchFET?
- Height: 1.04mm
- Nominal Vgs: 1 V
- Package / Case: PowerPAK? 1212-8
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
- Avalanche Energy Rating (Eas): 42 mJ
- Rds On (Max) @ Id, Vgs: 7.5m Ω @ 18.3A, 10V
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