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- Manufacturer No：IXDN602SIA
- Manufacturer：IXYS
- Category：PMIC - Gate Drivers
- Datasheet：IXDN602SIA
- SKU：2907597
- Description：ROHS3Compliant Active IGBT N-Channel P-Channel MOSFET Surface Mount gate driver 540.001716mg 0.8V 3V 2A 2A 125C
User Guide
User Guide
IXDN602SIA Details
ROHS3Compliant Active IGBT N-Channel P-Channel MOSFET Surface Mount gate driver 540.001716mg 0.8V 3V 2A 2A 125C
IXDN602SIA Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mounting Type: Surface Mount
- Radiation Hardening: No
- Number of Pins: 8
- Factory Lead Time: 8 Weeks
- Min Operating Temperature: -40°C
- Max Output Current: 2A
- Min Supply Voltage: 4.5V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Supply Current: 10μA
- Supplier Device Package: 8-SOIC
- Rise Time: 15ns
- Channel Type: Independent
- Turn-Off Delay Time: 75 ns
- Weight: 540.001716mg
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V~35V
- RoHS Status: ROHS3 Compliant
- Number of Outputs: 2
- Number of Drivers: 2
- Mount: Surface Mount
- Lead Free: Lead Free
- Max Operating Temperature: 125°C
- Packaging: Tube
- Published: 2010
- Output Current: 2A
- Operating Temperature: -55°C~150°C TJ
- Max Supply Voltage: 35V
- Input Type: Non-Inverting
- Fall Time (Typ): 15 ns
- Propagation Delay: 60 ns
- Turn On Delay Time: 75 ns
- Driven Configuration: Low-Side
- Current - Peak Output (Source, Sink): 2A 2A
- Logic Voltage - VIL, VIH: 0.8V 3V
- Rise / Fall Time (Typ): 7.5ns 6.5ns
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