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- Manufacturer No：SIHG47N60E-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIHG47N60E-GE3
- SKU：291696
- Description：MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS
User Guide
User Guide
SIHG47N60E-GE3 Details
MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS
SIHG47N60E-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Published: 2014
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±30V
- Length: 15.87mm
- Turn On Delay Time: 24 ns
- Width: 5.31mm
- Continuous Drain Current (ID): 47A
- Weight: 38.000013g
- Drain to Source Resistance: 64mOhm
- Power Dissipation: 357W
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Rds On Max: 64 mΩ
- Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Packaging: Tube
- Threshold Voltage: 2.5V
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-247-3
- Fall Time (Typ): 13 ns
- Supplier Device Package: TO-247AC
- Height: 20.7mm
- Rise Time: 11ns
- Resistance: 64mOhm
- Current - Continuous Drain (Id) @ 25°C: 47A Tc
- Turn-Off Delay Time: 94 ns
- Power Dissipation-Max: 357W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 100V
- Input Capacitance: 9.62nF
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