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- Manufacturer No：SI2309DS-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2309DS-T1-E3
- SKU：294365
- Description：MOSFET P-CH 60V 1.25A SOT23-3
User Guide
User Guide
SI2309DS-T1-E3 Details
MOSFET P-CH 60V 1.25A SOT23-3
SI2309DS-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Drain to Source Voltage (Vdss): 60V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Width: 1.4mm
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Power Dissipation: 1.25W
- Series: TrenchFET?
- Drain to Source Breakdown Voltage: -60V
- Resistance: 340mOhm
- Weight: 1.437803g
- Fall Time (Typ): 11.5 ns
- Turn-Off Delay Time: 15.5 ns
- Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
- Rise Time: 11.5ns
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Voltage: 60V
- Published: 2008
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Current: 12A
- Vgs (Max): ±20V
- FET Type: P-Channel
- Height: 1.02mm
- Turn On Delay Time: 10.5 ns
- Length: 3.04mm
- Drain to Source Resistance: 340mOhm
- Supplier Device Package: SOT-23-3 (TO-236)
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Power Dissipation-Max: 1.25W Ta
- Rds On Max: 340 mΩ
- Continuous Drain Current (ID): -1.25A
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