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  • Manufacturer No:
    SI7852DP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    294852
  • Description:
    MOSFET 80V 12.5A 5.2W
  • Quantity:
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Inventory:12937
  • Qty Unit Price price
  • 1 $1.99 $1.99
  • 10 $1.97 $19.7
  • 100 $1.95 $195
  • 1000 $1.93 $1930
  • 10000 $1.91 $19100

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  • Manufacturer No:
    SI7852DP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI7852DP-T1-E3
  • SKU:
    294852
  • Description:
    MOSFET 80V 12.5A 5.2W

SI7852DP-T1-E3 Details

MOSFET 80V 12.5A 5.2W

SI7852DP-T1-E3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Peak Reflow Temperature (Cel): 260
  • Published: 2011
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Length: 4.9mm
  • Transistor Application: SWITCHING
  • Drain to Source Breakdown Voltage: 80V
  • Pulsed Drain Current-Max (IDM): 50A
  • Case Connection: DRAIN
  • Drain Current-Max (Abs) (ID): 7.6A
  • Continuous Drain Current (ID): 12.5A
  • Rise Time: 11 ns
  • Series: TrenchFET?
  • Nominal Vgs: 2 V
  • Package / Case: PowerPAK? SO-8
  • Weight: 506.605978mg
  • Width: 5.89mm
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Resistance: 16.5mOhm
  • Rds On (Max) @ Id, Vgs: 16.5m Ω @ 10A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Pin Count: 8
  • REACH SVHC: No SVHC
  • Number of Terminations: 5
  • Time@Peak Reflow Temperature-Max (s): 40
  • Factory Lead Time: 14 Weeks
  • Element Configuration: Single
  • Threshold Voltage: 2V
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Terminal Form: C BEND
  • Subcategory: FET General Purpose Power
  • Turn-Off Delay Time: 40 ns
  • Fall Time (Typ): 11 ns
  • Height: 1.12mm
  • Turn On Delay Time: 17 ns
  • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
  • Power Dissipation: 1.9W
  • Additional Feature: FAST SWITCHING
  • JESD-30 Code: R-XDSO-C5
  • Power Dissipation-Max: 1.9W Ta
  • Vgs(th) (Max) @ Id: 2V @ 250μA (Min)
  • Current - Continuous Drain (Id) @ 25°C: 7.6A Ta

Excellent

Based on reviews

Excellent

Based on reviews

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