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- Manufacturer No：SI3424BDV-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3424BDV-T1-E3
- SKU：295475
- Description：MOSFET N-CH 30V 8A 6TSOP
User Guide
User Guide
SI3424BDV-T1-E3 Details
MOSFET N-CH 30V 8A 6TSOP
SI3424BDV-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Part Status: Obsolete
- Published: 2012
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Vgs (Max): ±20V
- Fall Time (Typ): 12 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Nominal Vgs: 3 V
- Power Dissipation: 2.1W
- Current - Continuous Drain (Id) @ 25°C: 8A Tc
- Rds On Max: 28 mΩ
- Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
- Input Capacitance: 735pF
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Min Operating Temperature: -55°C
- Number of Pins: 6
- Threshold Voltage: 3V
- REACH SVHC: Unknown
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- Continuous Drain Current (ID): 8A
- Technology: MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Turn On Delay Time: 18 ns
- Turn-Off Delay Time: 17 ns
- Drain to Source Resistance: 28mOhm
- Rise Time: 85ns
- Supplier Device Package: 6-TSOP
- Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
- Power Dissipation-Max: 2.1W Ta 2.98W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 15V
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