Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:102283
- Qty Unit Price price
- 1 $88.454 $88.454
- 10 $87.578 $875.78
- 100 $86.71 $8671
- 1000 $85.851 $85851
- 10000 $85 $850000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI1024X-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI1024X-T1-GE3
- SKU：296151
- Description：VISHAY - SI1024X-T1-GE3 - MOSFET, DUAL N CHANNEL, 20V, 0.485A, SC-89-6
User Guide
User Guide
SI1024X-T1-GE3 Details
VISHAY - SI1024X-T1-GE3 - MOSFET, DUAL N CHANNEL, 20V, 0.485A, SC-89-6
SI1024X-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- Max Power Dissipation: 250mW
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 6V
- Height: 600μm
- Terminal Form: FLAT
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Threshold Voltage: 450mV
- Additional Feature: LOW THRESHOLD
- Weight: 8.193012mg
- Rds On (Max) @ Id, Vgs: 700m Ω @ 600mA, 4.5V
- Base Part Number: SI1024
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 6
- Peak Reflow Temperature (Cel): 260
- Power Dissipation: 250mW
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Drain to Source Breakdown Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- Width: 1.2mm
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 600mA
- Length: 1.7mm
- Resistance: 700mOhm
- Series: TrenchFET?
- Package / Case: SOT-563, SOT-666
- Vgs(th) (Max) @ Id: 900mV @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 485mA
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Drain Current-Max (Abs) (ID): 0.485A
Search for similar products
SI1024X-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI1024X-T1-GE3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
