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- Manufacturer No：SI1902DL-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI1902DL-T1-E3
- SKU：296388
- Description：MOSFET 2N-CH 20V 0.66A SC70-6
User Guide
User Guide
SI1902DL-T1-E3 Details
MOSFET 2N-CH 20V 0.66A SC70-6
SI1902DL-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Published: 2016
- Number of Pins: 6
- Terminal Form: GULL WING
- Gate to Source Voltage (Vgs): 12V
- Factory Lead Time: 14 Weeks
- Element Configuration: Dual
- Drain to Source Voltage (Vdss): 20V
- Width: 1.25mm
- Height: 1.1mm
- Operating Mode: ENHANCEMENT MODE
- Turn-Off Delay Time: 10 ns
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Fall Time (Typ): 16 ns
- Series: TrenchFET?
- Continuous Drain Current (ID): 660mA
- Max Power Dissipation: 270mW
- Nominal Vgs: 600 mV
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 385m Ω @ 660mA, 4.5V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 6
- Pin Count: 6
- REACH SVHC: No SVHC
- Max Junction Temperature (Tj): 150°C
- Length: 2mm
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- Threshold Voltage: 1.5V
- Turn On Delay Time: 10 ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- Rise Time: 16 ns
- FET Type: 2 N-Channel (Dual)
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Power Dissipation: 270mW
- Weight: 7.512624mg
- Resistance: 385mOhm
- Base Part Number: SI1902
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