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  • Manufacturer No:
    SI2301BDS-T1-E3
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    297562
  • Description:
    VISHAY - SI2301BDS-T1-E3 - P CHANNEL MOSFET, FULL REEL
  • Quantity:
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Inventory:61834
  • Qty Unit Price price
  • 1 $0.678 $0.678
  • 10 $0.671 $6.71
  • 100 $0.664 $66.4
  • 1000 $0.657 $657
  • 10000 $0.65 $6500

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  • Manufacturer No:
    SI2301BDS-T1-E3
  • Manufacturer:
    Vishay
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI2301BDS-T1-E3
  • SKU:
    297562
  • Description:
    VISHAY - SI2301BDS-T1-E3 - P CHANNEL MOSFET, FULL REEL

SI2301BDS-T1-E3 Details

VISHAY - SI2301BDS-T1-E3 - P CHANNEL MOSFET, FULL REEL

SI2301BDS-T1-E3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 30
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Width: 1.4mm
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: Other Transistors
  • Turn On Delay Time: 20 ns
  • Turn-Off Delay Time: 30 ns
  • Rise Time: 40 ns
  • Power Dissipation: 700mW
  • Series: TrenchFET?
  • Length: 3.04mm
  • Weight: 1.437803g
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A Ta
  • Threshold Voltage: -950mV
  • Rds On (Max) @ Id, Vgs: 100m Ω @ 2.8A, 4.5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Pin Count: 3
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Published: 2003
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Resistance: 100mOhm
  • FET Type: P-Channel
  • Fall Time (Typ): 40 ns
  • Drain to Source Breakdown Voltage: -20V
  • Height: 1.12mm
  • Vgs (Max): ±8V
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • Power Dissipation-Max: 700mW Ta
  • Vgs(th) (Max) @ Id: 950mV @ 250μA
  • Continuous Drain Current (ID): -2.2A
  • Nominal Vgs: -950 mV
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 6V

Vishay — Manufacturer Introduction

Vishay Intertechnology is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Vishay has grown through acquisitions to include such top names as Dale, Sfernice, Draloric, Sprague, Vitramon, Siliconix, General Semiconductor, BCcomponents, and Beyschlag. Vishay's portfolio of brands represents an unmatched collection of discrete semiconductors and passive components. All of these brands and products are part of one global manufacturer: Vishay.

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