SI7463ADP-T1-GE3
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Channels
1ECCN Code
EAR99Radiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeContact Plating
TinNumber of Pins
8Pin Count
8Terminal Position
DUALREACH SVHC
No SVHCNumber of Terminations
5Published
2015Max Junction Temperature (Tj)
150°CFactory Lead Time
14 WeeksTransistor Element Material
SILICONGate to Source Voltage (Vgs)
20VPower Dissipation
5WDrain to Source Voltage (Vdss)
40VOperating Temperature
-55°C~150°C TJTechnology
MOSFET (Metal Oxide)Transistor Application
SWITCHINGOperating Mode
ENHANCEMENT MODEVgs (Max)
±20VTerminal Form
C BENDSubcategory
Other TransistorsConfiguration
SINGLE WITH BUILT-IN DIODECase Connection
DRAINDrive Voltage (Max Rds On,Min Rds On)
4.5V 10VTurn On Delay Time
15 nsFET Type
P-ChannelPulsed Drain Current-Max (IDM)
70AFall Time (Typ)
11 nsRise Time
14 nsDrain Current-Max (Abs) (ID)
46AHeight
1.12mmSeries
TrenchFET?Drain to Source Breakdown Voltage
-40VPackage / Case
PowerPAK? SO-8Turn-Off Delay Time
56 nsVgs(th) (Max) @ Id
2.3V @ 250μAJESD-30 Code
R-XDSO-C5Avalanche Energy Rating (Eas)
45 mJThreshold Voltage
-2.3VCurrent - Continuous Drain (Id) @ 25°C
46A TcRds On (Max) @ Id, Vgs
10m Ω @ 15A, 10VGate Charge (Qg) (Max) @ Vgs
144nC @ 10VPower Dissipation-Max
5W Ta 39W TcInput Capacitance (Ciss) (Max) @ Vds
4150pF @ 20VContinuous Drain Current (ID)
-16.6A