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- Manufacturer No：BUK78150-55A,115
- Manufacturer：NXP USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BUK78150-55A,115
- SKU：3034240
- Description：N-Channel 55 V 5.5A (Tc) 8W (Tc) Surface Mount SC-73
User Guide
User Guide
BUK78150-55A,115 Details
N-Channel 55 V 5.5A (Tc) 8W (Tc) Surface Mount SC-73
BUK78150-55A,115 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Part Status: Obsolete
- Number of Terminations: 4
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Published: 2010
- Terminal Finish: Tin (Sn)
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- DS Breakdown Voltage-Min: 55V
- Case Connection: DRAIN
- JESD-30 Code: R-PDSO-G4
- Package / Case: TO-261-4, TO-261AA
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Drain-source On Resistance-Max: 0.15Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
- Power Dissipation-Max: 8W Tc
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Pin Count: 4
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 40
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Pulsed Drain Current-Max (IDM): 22A
- Drain to Source Voltage (Vdss): 55V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- Drain Current-Max (Abs) (ID): 5.5A
- HTS Code: 8541.29.00.75
- Series: Automotive, AEC-Q101, TrenchMOS?
- Current - Continuous Drain (Id) @ 25°C: 5.5A Tc
- Avalanche Energy Rating (Eas): 25 mJ
- Rds On (Max) @ Id, Vgs: 150m Ω @ 5A, 10V
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