Add to like
Add to project list
  • Manufacturer No:
    SI7858ADP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    305059
  • Description:
    MOSFET N-CH 12V 20A PPAK SO-8
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:3000
  • Qty Unit Price price
  • 1 $1.243 $1.243
  • 10 $1.23 $12.3
  • 100 $1.217 $121.7
  • 1000 $1.204 $1204
  • 10000 $1.1911 $11911

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    SI7858ADP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI7858ADP-T1-E3
  • SKU:
    305059
  • Description:
    MOSFET N-CH 12V 20A PPAK SO-8

SI7858ADP-T1-E3 Details

MOSFET N-CH 12V 20A PPAK SO-8

SI7858ADP-T1-E3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Pin Count: 8
  • Peak Reflow Temperature (Cel): 260
  • Terminal Finish: Matte Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s): 30
  • Published: 2009
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Length: 4.9mm
  • Transistor Application: SWITCHING
  • Gate to Source Voltage (Vgs): 8V
  • Case Connection: DRAIN
  • Pulsed Drain Current-Max (IDM): 60A
  • Rise Time: 40 ns
  • Series: TrenchFET?
  • Turn-Off Delay Time: 140 ns
  • Continuous Drain Current (ID): 29A
  • Height: 1.04mm
  • Power Dissipation: 1.9W
  • Width: 5.89mm
  • Current - Continuous Drain (Id) @ 25°C: 20A Ta
  • JESD-30 Code: R-PDSO-C5
  • Rds On (Max) @ Id, Vgs: 2.6m Ω @ 29A, 4.5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Number of Terminations: 5
  • Drain to Source Breakdown Voltage: 12V
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Drain Current-Max (Abs) (ID): 20A
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Terminal Form: C BEND
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 40 ns
  • Fall Time (Typ): 70 ns
  • Vgs (Max): ±8V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • Package / Case: PowerPAK? SO-8
  • Weight: 506.605978mg
  • Resistance: 2.6mOhm
  • Power Dissipation-Max: 1.9W Ta
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 6V

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via