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- Manufacturer No：SQ3427EV-T1_GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SQ3427EV-T1_GE3
- SKU：306890
- Description：MOSFET P-CH 60V 6TSOP
User Guide
User Guide
SQ3427EV-T1_GE3 Details
MOSFET P-CH 60V 6TSOP
SQ3427EV-T1_GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Number of Terminations: 6
- Drain to Source Voltage (Vdss): 60V
- Reach Compliance Code: unknown
- Published: 2017
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- JESD-30 Code: R-PDSO-G6
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Series: Automotive, AEC-Q101, TrenchFET?
- Drain-source On Resistance-Max: 0.095Ohm
- Power Dissipation-Max: 5W Tc
- JEDEC-95 Code: MO-193AA
- Rds On (Max) @ Id, Vgs: 95m Ω @ 4.5A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- DS Breakdown Voltage-Min: 60V
- Transistor Element Material: SILICON
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- FET Type: P-Channel
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Drain Current-Max (Abs) (ID): 5.3A
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 5.3A Tc
- Feedback Cap-Max (Crss): 80 pF
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V
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