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- Manufacturer No：SI7866ADP-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7866ADP-T1-E3
- SKU：306922
- Description：MOSFET N-CH 20V 40A PPAK SO-8
User Guide
User Guide
SI7866ADP-T1-E3 Details
MOSFET N-CH 20V 40A PPAK SO-8
SI7866ADP-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Part Status: Obsolete
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 9 ns
- Series: TrenchFET?
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Resistance: 2.4MOhm
- Rise Time: 105 ns
- Current - Continuous Drain (Id) @ 25°C: 40A Tc
- JESD-30 Code: R-XDSO-C5
- Power Dissipation-Max: 5.4W Ta 83W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 5415pF @ 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 8
- Terminal Position: DUAL
- Number of Terminations: 5
- Published: 2009
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Length: 4.9mm
- Width: 5.0038mm
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 40A
- Case Connection: DRAIN
- Drain Current-Max (Abs) (ID): 35A
- Pulsed Drain Current-Max (IDM): 70A
- Turn On Delay Time: 18 ns
- Height: 1.04mm
- Package / Case: PowerPAK? SO-8
- Weight: 506.605978mg
- Turn-Off Delay Time: 49 ns
- Power Dissipation: 5.4W
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
- Rds On (Max) @ Id, Vgs: 2.4m Ω @ 20A, 10V
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