SI7121DN-T1-GE3Vishay Siliconix
    Add to like
    Add to project list
    • Manufacturer No：
      SI7121DN-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      308501
    • Description：
      MOSFET P-CH 30V 16A 1212-8
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:13080
    • Qty Unit Price price
    • 1 $212.286 $212.286
    • 10 $210.184 $2101.84
    • 100 $208.102 $20810.2
    • 1000 $206.041 $206041
    • 10000 $204 $2040000

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      SI7121DN-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI7121DN-T1-GE3
    • SKU：
      308501
    • Description：
      MOSFET P-CH 30V 16A 1212-8

    User Guide

    User Guide

    SI7121DN-T1-GE3 Details

    MOSFET P-CH 30V 16A 1212-8

    SI7121DN-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Terminal Position: DUAL
    • REACH SVHC: No SVHC
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Gate to Source Voltage (Vgs): 25V
    • Dual Supply Voltage: 30V
    • Transistor Application: SWITCHING
    • Pulsed Drain Current-Max (IDM): 50A
    • Subcategory: Other Transistors
    • Case Connection: DRAIN
    • Width: 3.05mm
    • Fall Time (Typ): 15 ns
    • Rise Time: 100 ns
    • Series: TrenchFET?
    • Turn-Off Delay Time: 28 ns
    • Vgs (Max): ±25V
    • Height: 1.04mm
    • Power Dissipation: 3.7W
    • Operating Temperature: -50°C~150°C TJ
    • Avalanche Energy Rating (Eas): 20 mJ
    • JESD-30 Code: S-XDSO-C5
    • Power Dissipation-Max: 3.7W Ta 52W Tc
    • Rds On (Max) @ Id, Vgs: 18m Ω @ 10A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Pin Count: 8
    • Termination: SMD/SMT
    • Published: 2012
    • Number of Terminations: 5
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Terminal Form: C BEND
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Length: 3.05mm
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • FET Type: P-Channel
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Drain to Source Breakdown Voltage: -30V
    • Resistance: 18mOhm
    • Threshold Voltage: -3V
    • Turn On Delay Time: 44 ns
    • Current - Continuous Drain (Id) @ 25°C: 16A Tc
    • Package / Case: PowerPAK? 1212-8
    • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
    • Nominal Vgs: -3 V
    • Continuous Drain Current (ID): -16A
    • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
    Search for similar products

    SI7121DN-T1-GE3 Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & SI7121DN-T1-GE3

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via