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  • Manufacturer No:
    SQM100P10-19L_GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    310082
  • Description:
    Trans MOSFET P-CH 100V 93A Automotive 3-Pin(2+Tab) D2PAK
  • Quantity:
      • RFQ
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Inventory:3221
  • Qty Unit Price price
  • 1 $4796.146 $4796.146
  • 10 $4748.659 $47486.59
  • 100 $4701.642 $470164.2
  • 1000 $4655.091 $4655091
  • 10000 $4609 $46090000

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  • Manufacturer No:
    SQM100P10-19L_GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SQM100P10-19L_GE3
  • SKU:
    310082
  • Description:
    Trans MOSFET P-CH 100V 93A Automotive 3-Pin(2+Tab) D2PAK

SQM100P10-19L_GE3 Details

Trans MOSFET P-CH 100V 93A Automotive 3-Pin(2+Tab) D2PAK

SQM100P10-19L_GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Factory Lead Time: 12 Weeks
  • Drain to Source Voltage (Vdss): 100V
  • Reach Compliance Code: unknown
  • Terminal Position: SINGLE
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • FET Type: P-Channel
  • Series: Automotive, AEC-Q101, TrenchFET?
  • Power Dissipation-Max: 375W Tc
  • Avalanche Energy Rating (Eas): 245 mJ
  • Current - Continuous Drain (Id) @ 25°C: 93A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 14100pF @ 25V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Packaging: Tape & Reel (TR)
  • Surface Mount: YES
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Terminal Form: GULL WING
  • DS Breakdown Voltage-Min: 100V
  • Transistor Element Material: SILICON
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Pulsed Drain Current-Max (IDM): 200A
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • Drain Current-Max (Abs) (ID): 93A
  • Drain-source On Resistance-Max: 0.019Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Rds On (Max) @ Id, Vgs: 19m Ω @ 30A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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