Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:20574
- Qty Unit Price price
- 1 $0.802 $0.802
- 10 $0.794 $7.94
- 100 $0.786 $78.6
- 1000 $0.778 $778
- 10000 $0.77 $7700
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI2325DS-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2325DS-T1-E3
- SKU：310334
- Description：MOSFET P-CH 150V 0.53A SOT23-3
User Guide
User Guide
SI2325DS-T1-E3 Details
MOSFET P-CH 150V 0.53A SOT23-3
SI2325DS-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Published: 2003
- Power Dissipation: 750mW
- Width: 1.4mm
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- FET Type: P-Channel
- Turn On Delay Time: 7 ns
- Turn-Off Delay Time: 16 ns
- Threshold Voltage: -4.5V
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Weight: 1.437803g
- Drain to Source Breakdown Voltage: -150V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 530mA Ta
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Drain to Source Voltage (Vdss): 150V
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Subcategory: Other Transistors
- Resistance: 1.2Ohm
- Height: 1.12mm
- Series: TrenchFET?
- Length: 3.04mm
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Power Dissipation-Max: 750mW Ta
- Rds On (Max) @ Id, Vgs: 1.2 Ω @ 500mA, 10V
- Continuous Drain Current (ID): -690mA
Search for similar products
SI2325DS-T1-E3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI2325DS-T1-E3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
