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- Manufacturer No：SI2337DS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2337DS-T1-GE3
- SKU：315027
- Description：In a Pack of 20, P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3
User Guide
User Guide
SI2337DS-T1-GE3 Details
In a Pack of 20, P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3
SI2337DS-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Width: 1.4mm
- Drain to Source Voltage (Vdss): 80V
- Vgs (Max): ±20V
- Turn On Delay Time: 15 ns
- FET Type: P-Channel
- Fall Time (Typ): 12 ns
- Rise Time: 18 ns
- Resistance: 270mOhm
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Drain to Source Breakdown Voltage: -80V
- Threshold Voltage: -4V
- Power Dissipation: 760mW
- Current - Continuous Drain (Id) @ 25°C: 2.2A Tc
- Rds On (Max) @ Id, Vgs: 270m Ω @ 1.2A, 10V
- Power Dissipation-Max: 760mW Ta 2.5W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2014
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Subcategory: Other Transistors
- Turn-Off Delay Time: 20 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Height: 1.02mm
- Series: TrenchFET?
- Length: 3.04mm
- Weight: 1.437803g
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Operating Temperature: -50°C~150°C TJ
- Nominal Vgs: -4 V
- Continuous Drain Current (ID): -2.2A
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V
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