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- Manufacturer No：SI4800BDY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4800BDY-T1-E3
- SKU：316646
- Description：MOSFET N-CH 30V 6.5A 8-SOIC
User Guide
User Guide
SI4800BDY-T1-E3 Details
MOSFET N-CH 30V 6.5A 8-SOIC
SI4800BDY-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 30V
- Operating Temperature: -55°C~150°C TJ
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 9A
- Drain Current-Max (Abs) (ID): 6.5A
- Vgs (Max): ±25V
- Vgs(th) (Max) @ Id: 1.8V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Number of Pins: 8
- Pin Count: 8
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- Drain to Source Voltage (Vdss): 30V
- Published: 2004
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Series: TrenchFET?
- Power Dissipation-Max: 1.3W Ta
- Current - Continuous Drain (Id) @ 25°C: 6.5A Ta
- Rds On (Max) @ Id, Vgs: 18.5m Ω @ 9A, 10V
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