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- Manufacturer No：SI3458BDV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3458BDV-T1-GE3
- SKU：318958
- Description：MOSFET 60V 4.1A 3.3W 100mohm @ 10V
User Guide
User Guide
SI3458BDV-T1-GE3 Details
MOSFET 60V 4.1A 3.3W 100mohm @ 10V
SI3458BDV-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Form: GULL WING
- Drain to Source Breakdown Voltage: 60V
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Power Dissipation: 2W
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Width: 1.65mm
- Length: 3.05mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Rise Time: 12 ns
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Turn-Off Delay Time: 18 ns
- Nominal Vgs: 3 V
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 4.1A Tc
- Power Dissipation-Max: 2W Ta 3.3W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Published: 2011
- Threshold Voltage: 3V
- REACH SVHC: Unknown
- Element Configuration: Single
- Height: 1mm
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Resistance: 100mOhm
- Fall Time (Typ): 10 ns
- Continuous Drain Current (ID): 3.2A
- Turn On Delay Time: 5 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Weight: 19.986414mg
- Terminal Finish: Pure Matte Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
- Rds On (Max) @ Id, Vgs: 100m Ω @ 3.2A, 10V
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