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- Manufacturer No：SI3483DV-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3483DV-T1-E3
- SKU：320276
- Description：MOSFET 30V 6.2A 2.0W 35mohm @ 10V
User Guide
User Guide
SI3483DV-T1-E3 Details
MOSFET 30V 6.2A 2.0W 35mohm @ 10V
SI3483DV-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Turn On Delay Time: 10 ns
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Series: TrenchFET?
- Drain Current-Max (Abs) (ID): 4.7A
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Turn-Off Delay Time: 71 ns
- Power Dissipation-Max: 1.14W Ta
- Continuous Drain Current (ID): -6.2A
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 6
- Pin Count: 6
- Published: 2015
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Rise Time: 10ns
- Fall Time (Typ): 10 ns
- FET Type: P-Channel
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Resistance: 35mOhm
- Threshold Voltage: -1V
- Power Dissipation: 1.14W
- Nominal Vgs: -1 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A Ta
- Rds On (Max) @ Id, Vgs: 35m Ω @ 6.2A, 10V
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