SI4914DY-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI4914DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      321937
    • Description：
      MOSFET 2N-CH 30V 5.5A 8-SOIC
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    • Manufacturer No：
      SI4914DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI4914DY-T1-E3
    • SKU：
      321937
    • Description：
      MOSFET 2N-CH 30V 5.5A 8-SOIC

    User Guide

    User Guide

    SI4914DY-T1-E3 Details

    MOSFET 2N-CH 30V 5.5A 8-SOIC

    SI4914DY-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Part Status: Obsolete
    • Max Operating Temperature: 150°C
    • Length: 5mm
    • Drain to Source Voltage (Vdss): 30V
    • Width: 4mm
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Turn-Off Delay Time: 35 ns
    • Turn On Delay Time: 7 ns
    • FET Feature: Logic Level Gate
    • Supplier Device Package: 8-SO
    • Rise Time: 13ns
    • FET Type: 2 N-Channel (Half Bridge)
    • Series: LITTLE FOOT?
    • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
    • Base Part Number: SI4914
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • Min Operating Temperature: -55°C
    • Number of Pins: 8
    • Published: 2009
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 30V
    • Operating Temperature: -55°C~150°C TJ
    • Drain to Source Resistance: 20mOhm
    • Height: 1.55mm
    • Fall Time (Typ): 13 ns
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Continuous Drain Current (ID): 5.7A
    • Weight: 186.993455mg
    • Rds On Max: 23 mΩ
    • Max Power Dissipation: 1.16W
    • Power - Max: 1.1W 1.16W
    • Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
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