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- Manufacturer No：SUD50N04-8M8P-4GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SUD50N04-8M8P-4GE3
- SKU：323811
- Description：MOSFET 40V 50A 48.1W 8.8mohm @ 10V
User Guide
User Guide
SUD50N04-8M8P-4GE3 Details
MOSFET 40V 50A 48.1W 8.8mohm @ 10V
SUD50N04-8M8P-4GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Pin Count: 4
- Published: 2013
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Height: 2.39mm
- DS Breakdown Voltage-Min: 40V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID): 50A
- Case Connection: DRAIN
- Length: 6.73mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Rise Time: 15 ns
- Continuous Drain Current (ID): 14A
- Width: 6.22mm
- Series: TrenchFET?
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Resistance: 8.8mOhm
- Rds On (Max) @ Id, Vgs: 8.8m Ω @ 20A, 10V
- Current - Continuous Drain (Id) @ 25°C: 14A Ta 50A Tc
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 40V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Threshold Voltage: 1.5V
- Vgs (Max): ±20V
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ): 15 ns
- Turn On Delay Time: 30 ns
- Turn-Off Delay Time: 45 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Weight: 1.437803g
- Avalanche Energy Rating (Eas): 45 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V
- Power Dissipation: 48.1W
- Power Dissipation-Max: 3.1W Ta 48.1W Tc
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