SUD50N06-08H-E3Vishay Siliconix
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    • Manufacturer No：
      SUD50N06-08H-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      325383
    • Description：
      MOSFET N-CH 60V 93A TO252
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    • Manufacturer No：
      SUD50N06-08H-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUD50N06-08H-E3
    • SKU：
      325383
    • Description：
      MOSFET N-CH 60V 93A TO252

    User Guide

    User Guide

    SUD50N06-08H-E3 Details

    MOSFET N-CH 60V 93A TO252

    SUD50N06-08H-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • Drain to Source Breakdown Voltage: 60V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Published: 2004
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Pulsed Drain Current-Max (IDM): 100A
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Turn-Off Delay Time: 50 ns
    • Turn On Delay Time: 28 ns
    • Vgs(th) (Max) @ Id: 4.5V @ 250μA
    • Rise Time: 13ns
    • Width: 6.223mm
    • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
    • Avalanche Energy Rating (Eas): 125 mJ
    • Power Dissipation-Max: 3W Ta 136W Tc
    • Rds On (Max) @ Id, Vgs: 7.8m Ω @ 20A, 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Qualification Status: Not Qualified
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Factory Lead Time: 13 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain Current-Max (Abs) (ID): 50A
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 10 ns
    • Series: TrenchFET?
    • Height: 2.3876mm
    • Length: 6.7056mm
    • Continuous Drain Current (ID): 93A
    • Power Dissipation: 136W
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Drain-source On Resistance-Max: 0.0078Ohm
    • Current - Continuous Drain (Id) @ 25°C: 93A Tc
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