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  • Manufacturer No:
    SI2304BDS-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    325623
  • Description:
    MOSFET 30V 3.2A 1.08W 70mohm @ 10V
  • Quantity:
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Inventory:93897
  • Qty Unit Price price
  • 1 $668.071 $668.071
  • 10 $661.456 $6614.56
  • 100 $654.906 $65490.6
  • 1000 $648.421 $648421
  • 10000 $642 $6420000

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  • Manufacturer No:
    SI2304BDS-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI2304BDS-T1-GE3
  • SKU:
    325623
  • Description:
    MOSFET 30V 3.2A 1.08W 70mohm @ 10V

SI2304BDS-T1-GE3 Details

MOSFET 30V 3.2A 1.08W 70mohm @ 10V

SI2304BDS-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • Pin Count: 3
  • Peak Reflow Temperature (Cel): 260
  • Terminal Finish: Matte Tin (Sn)
  • Max Junction Temperature (Tj): 150°C
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 30V
  • Power Dissipation: 750mW
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Subcategory: FET General Purpose Power
  • Threshold Voltage: 2.25V
  • Turn On Delay Time: 7.5 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Height: 1.12mm
  • Turn-Off Delay Time: 19 ns
  • Weight: 1.437803g
  • Rise Time: 12.5 ns
  • Power Dissipation-Max: 750mW Ta
  • Rds On (Max) @ Id, Vgs: 70m Ω @ 2.5A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Published: 2015
  • Time@Peak Reflow Temperature-Max (s): 30
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Width: 1.4mm
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Continuous Drain Current (ID): 3.2A
  • Drain Current-Max (Abs) (ID): 2.6A
  • Resistance: 70mOhm
  • Series: TrenchFET?
  • Length: 3.04mm
  • Fall Time (Typ): 12.5 ns
  • Current - Continuous Drain (Id) @ 25°C: 2.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 15V

Excellent

Based on reviews

Excellent

Based on reviews

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