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- Manufacturer No：SIHG20N50E-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIHG20N50E-GE3
- SKU：328413
- Description：VISHAY SIHG20N50E-GE3. MOSFET, N CHANNEL, 500V, 19A, TO247AC-3
User Guide
User Guide
SIHG20N50E-GE3 Details
VISHAY SIHG20N50E-GE3. MOSFET, N CHANNEL, 500V, 19A, TO247AC-3
SIHG20N50E-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-247-3
- Pulsed Drain Current-Max (IDM): 42A
- Turn On Delay Time: 17 ns
- Turn-Off Delay Time: 48 ns
- Current - Continuous Drain (Id) @ 25°C: 19A Tc
- Power Dissipation-Max: 179W Tc
- Avalanche Energy Rating (Eas): 204 mJ
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Factory Lead Time: 18 Weeks
- Drain to Source Breakdown Voltage: 500V
- Published: 2017
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Fall Time (Typ): 25 ns
- Vgs (Max): ±30V
- Continuous Drain Current (ID): 19A
- Resistance: 160mOhm
- JEDEC-95 Code: TO-247AC
- Rise Time: 27ns
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V
- Rds On (Max) @ Id, Vgs: 184m Ω @ 10A, 10V
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