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- Manufacturer No：SI4816BDY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4816BDY-T1-E3
- SKU：331388
- Description：MOSFET 2N-CH 30V 5.8A 8-SOIC
User Guide
User Guide
SI4816BDY-T1-E3 Details
MOSFET 2N-CH 30V 5.8A 8-SOIC
SI4816BDY-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 40
- Factory Lead Time: 14 Weeks
- Published: 2005
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- Operating Temperature: -55°C~150°C TJ
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Height: 1.75mm
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 9 ns
- Turn On Delay Time: 13 ns
- FET Feature: Logic Level Gate
- Continuous Drain Current (ID): 5.8A
- Weight: 186.993455mg
- Resistance: 18.5mOhm
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Base Part Number: SI4816
- Current - Continuous Drain (Id) @ 25°C: 5.8A 8.2A
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Max Junction Temperature (Tj): 150°C
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Length: 5mm
- Drain to Source Voltage (Vdss): 30V
- Width: 4mm
- Threshold Voltage: 1V
- Terminal Finish: MATTE TIN
- Operating Mode: ENHANCEMENT MODE
- Max Power Dissipation: 1.25W
- Rise Time: 9 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Nominal Vgs: 3 V
- Turn-Off Delay Time: 31 ns
- FET Type: 2 N-Channel (Half Bridge)
- Series: LITTLE FOOT?
- Power - Max: 1W 1.25W
- Rds On (Max) @ Id, Vgs: 18.5m Ω @ 6.8A, 10V
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