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- Manufacturer No：SI3900DV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI3900DV-T1-GE3
- SKU：333692
- Description：MOSFET 20V 2.4A 1.15W 125mohm @ 4.5V
User Guide
User Guide
SI3900DV-T1-GE3 Details
MOSFET 20V 2.4A 1.15W 125mohm @ 4.5V
SI3900DV-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Published: 2013
- Number of Pins: 6
- Terminal Form: GULL WING
- Gate to Source Voltage (Vgs): 12V
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Drain Current-Max (Abs) (ID): 2A
- Operating Temperature: -55°C~150°C TJ
- Turn On Delay Time: 10 ns
- Continuous Drain Current (ID): 2.4A
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Max Power Dissipation: 830mW
- Weight: 19.986414mg
- Rds On (Max) @ Id, Vgs: 125m Ω @ 2.4A, 4.5V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Dual
- Drain to Source Breakdown Voltage: 20V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 6 ns
- Turn-Off Delay Time: 14 ns
- Series: TrenchFET?
- Rise Time: 30ns
- Terminal Finish: PURE MATTE TIN
- Power Dissipation: 830mW
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Base Part Number: SI3900
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