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  • Manufacturer No:
    SI2333DS-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    334050
  • Description:
    MOSFET P-CH 12V 4.1A SOT23-3
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  • 10 $0.857 $8.57
  • 100 $0.848 $84.8
  • 1000 $0.839 $839

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  • Manufacturer No:
    SI2333DS-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI2333DS-T1-E3
  • SKU:
    334050
  • Description:
    MOSFET P-CH 12V 4.1A SOT23-3

SI2333DS-T1-E3 Details

MOSFET P-CH 12V 4.1A SOT23-3

SI2333DS-T1-E3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • Pin Count: 3
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Voltage (Vdss): 12V
  • Max Junction Temperature (Tj): 150°C
  • Published: 2008
  • Transistor Element Material: SILICON
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: Other Transistors
  • Turn On Delay Time: 25 ns
  • Fall Time (Typ): 45 ns
  • Height: 1.12mm
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Length: 3.04mm
  • Weight: 1.437803g
  • Resistance: 32mOhm
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Power Dissipation-Max: 750mW Ta
  • Continuous Drain Current (ID): -4.1A
  • Rds On (Max) @ Id, Vgs: 32m Ω @ 5.3A, 4.5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s): 30
  • Factory Lead Time: 14 Weeks
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Power Dissipation: 750mW
  • Width: 1.4mm
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Drain to Source Breakdown Voltage: -12V
  • FET Type: P-Channel
  • Rise Time: 45 ns
  • Series: TrenchFET?
  • Vgs (Max): ±8V
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
  • Threshold Voltage: -1V
  • Turn-Off Delay Time: 72 ns
  • Nominal Vgs: -1 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V

Excellent

Based on reviews

Excellent

Based on reviews

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