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- Manufacturer No：SI1308EDL-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1308EDL-T1-GE3
- SKU：334759
- Description：VISHAY - SI1308EDL-T1-GE3 - Power MOSFET, N Channel, 30 V, 1.4 A, 0.11 ohm, SOT-323, Surface Mount
User Guide
User Guide
SI1308EDL-T1-GE3 Details
VISHAY - SI1308EDL-T1-GE3 - Power MOSFET, N Channel, 30 V, 1.4 A, 0.11 ohm, SOT-323, Surface Mount
SI1308EDL-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Published: 2013
- REACH SVHC: No SVHC
- Gate to Source Voltage (Vgs): 12V
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Power Dissipation: 400mW
- Height: 1.1mm
- Subcategory: FET General Purpose Power
- Width: 1.35mm
- Fall Time (Typ): 8 ns
- Threshold Voltage: 600mV
- Series: TrenchFET?
- Vgs (Max): ±12V
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 10V
- Current - Continuous Drain (Id) @ 25°C: 1.4A Tc
- Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
- Rds On (Max) @ Id, Vgs: 132m Ω @ 1.4A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 30V
- Continuous Drain Current (ID): 1.5A
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Length: 2.2mm
- Package / Case: SC-70, SOT-323
- Turn-Off Delay Time: 8 ns
- Rise Time: 9 ns
- Turn On Delay Time: 2 ns
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Resistance: 132mOhm
- Weight: 124.596154mg
- Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V
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