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- Manufacturer No：SUD19P06-60-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SUD19P06-60-GE3
- SKU：335949
- Description：MOSFET P-CH 60V 18.3A TO-252
User Guide
User Guide
SUD19P06-60-GE3 Details
MOSFET P-CH 60V 18.3A TO-252
SUD19P06-60-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 4
- Terminal Form: GULL WING
- Max Junction Temperature (Tj): 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Published: 2017
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Case Connection: DRAIN
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type: P-Channel
- Turn On Delay Time: 8 ns
- Resistance: 60mOhm
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Power Dissipation: 2.3W
- Drain to Source Breakdown Voltage: -60V
- Threshold Voltage: -1V
- Height: 2.507mm
- Continuous Drain Current (ID): -19A
- Avalanche Energy Rating (Eas): 24.2 mJ
- Power Dissipation-Max: 2.3W Ta 38.5W Tc
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 60V
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- JESD-30 Code: R-PSSO-G2
- Length: 6.73mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 30 ns
- Rise Time: 9 ns
- Width: 6.22mm
- Series: TrenchFET?
- Turn-Off Delay Time: 65 ns
- Weight: 1.437803g
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
- Rds On (Max) @ Id, Vgs: 60m Ω @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C: 18.3A Tc
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