SI7117DN-T1-GE3
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Channels
1ECCN Code
EAR99Pbfree Code
yesRadiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeContact Plating
TinNumber of Pins
8Pin Count
8Terminal Position
DUALPublished
2013Peak Reflow Temperature (Cel)
260Number of Terminations
5Drain to Source Voltage (Vdss)
150VTime@Peak Reflow Temperature-Max (s)
40Factory Lead Time
14 WeeksTransistor Element Material
SILICONElement Configuration
SingleGate to Source Voltage (Vgs)
20VOperating Temperature
-55°C~150°C TJTechnology
MOSFET (Metal Oxide)Transistor Application
SWITCHINGOperating Mode
ENHANCEMENT MODEVgs (Max)
±20VTerminal Form
C BENDSubcategory
Other TransistorsCase Connection
DRAINPulsed Drain Current-Max (IDM)
2.2AContinuous Drain Current (ID)
1.1AFET Type
P-ChannelTurn On Delay Time
7 nsFall Time (Typ)
11 nsRise Time
11 nsTurn-Off Delay Time
16 nsSeries
TrenchFET?Drive Voltage (Max Rds On,Min Rds On)
6V 10VVgs(th) (Max) @ Id
4.5V @ 250μAPower Dissipation
3.2WGate Charge (Qg) (Max) @ Vgs
12nC @ 10VPackage / Case
PowerPAK? 1212-8Drain to Source Breakdown Voltage
-150VJESD-30 Code
S-XDSO-C5Input Capacitance (Ciss) (Max) @ Vds
510pF @ 25VRds On (Max) @ Id, Vgs
1.2 Ω @ 500mA, 10VCurrent - Continuous Drain (Id) @ 25°C
2.17A TcPower Dissipation-Max
3.2W Ta 12.5W Tc