SI3805DV-T1-GE3Vishay Siliconix
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    • Manufacturer No：
      SI3805DV-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      340908
    • Description：
      MOSFET P-CH 20V 3.3A 6-TSOP
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    • Manufacturer No：
      SI3805DV-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI3805DV-T1-GE3
    • SKU：
      340908
    • Description：
      MOSFET P-CH 20V 3.3A 6-TSOP

    User Guide

    User Guide

    SI3805DV-T1-GE3 Details

    MOSFET P-CH 20V 3.3A 6-TSOP

    SI3805DV-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Drain Current-Max (Abs) (ID): 3A
    • Number of Terminations: 6
    • Pin Count: 6
    • Peak Reflow Temperature (Cel): 260
    • Gate to Source Voltage (Vgs): 12V
    • REACH SVHC: Unknown
    • Drain to Source Voltage (Vdss): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • FET Type: P-Channel
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Turn On Delay Time: 18 ns
    • Power Dissipation: 1.1W
    • Vgs(th) (Max) @ Id: 1.5V @ 250μA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Weight: 19.986414mg
    • Resistance: 84mOhm
    • Current - Continuous Drain (Id) @ 25°C: 3.3A Tc
    • Nominal Vgs: -1.5 V
    • Power Dissipation-Max: 1.1W Ta 1.4W Tc
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Published: 2016
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Operating Temperature: -55°C~150°C TJ
    • Transistor Application: SWITCHING
    • Subcategory: Other Transistors
    • Fall Time (Typ): 10 ns
    • Rise Time: 40 ns
    • Drain to Source Breakdown Voltage: -20V
    • Turn-Off Delay Time: 18 ns
    • Vgs (Max): ±12V
    • Threshold Voltage: -1.5V
    • FET Feature: Schottky Diode (Isolated)
    • Drive Voltage (Max Rds On,Min Rds On): 2.5V 10V
    • Series: LITTLE FOOT?
    • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
    • Continuous Drain Current (ID): -3.3A
    • Rds On (Max) @ Id, Vgs: 84m Ω @ 3A, 10V
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