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- Manufacturer No：SI9926BDY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI9926BDY-T1-E3
- SKU：341109
- Description：Trans MOSFET N-CH 20V 6.2A 8-Pin SOIC N T/R
User Guide
User Guide
SI9926BDY-T1-E3 Details
Trans MOSFET N-CH 20V 6.2A 8-Pin SOIC N T/R
SI9926BDY-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Lead Free: Lead Free
- Part Status: Obsolete
- Gate to Source Voltage (Vgs): 12V
- Element Configuration: Dual
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Resistance: 20mOhm
- Fall Time (Typ): 50 ns
- Width: 3.9878mm
- Rise Time: 50ns
- Series: TrenchFET?
- Current - Continuous Drain (Id) @ 25°C: 6.2A
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Length: 4.9784mm
- Continuous Drain Current (ID): 8.2A
- Max Power Dissipation: 1.14W
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Nominal Vgs: 600 mV
- Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Max Operating Temperature: 150°C
- Published: 2007
- Drain to Source Breakdown Voltage: 20V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Resistance: 20mOhm
- Turn On Delay Time: 35 ns
- Height: 1.5494mm
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Supplier Device Package: 8-SO
- Turn-Off Delay Time: 31 ns
- Weight: 506.605978mg
- Power Dissipation: 1.14W
- Power - Max: 1.14W
- Rds On Max: 20 mΩ
- Base Part Number: SI9926
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