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- Manufacturer No：SIA445EDJ-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIA445EDJ-T1-GE3
- SKU：342284
- Description：MOSFET P-CH 20V 12A SC-70
User Guide
User Guide
SIA445EDJ-T1-GE3 Details
MOSFET P-CH 20V 12A SC-70
SIA445EDJ-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Terminations: 3
- Published: 2015
- Max Junction Temperature (Tj): 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Height: 800μm
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- FET Type: P-Channel
- Length: 2.05mm
- Turn-Off Delay Time: 55 ns
- Series: TrenchFET?
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Current - Continuous Drain (Id) @ 25°C: 12A Tc
- JESD-30 Code: S-PDSO-N3
- Package / Case: PowerPAK? SC-70-6
- Power Dissipation-Max: 3.5W Ta 19W Tc
- Continuous Drain Current (ID): -11.8A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Terminal Position: DUAL
- Number of Pins: 6
- Gate to Source Voltage (Vgs): 12V
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Pulsed Drain Current-Max (IDM): 50A
- Turn On Delay Time: 25 ns
- Power Dissipation: 3.5W
- Width: 2.05mm
- Drain to Source Breakdown Voltage: -20V
- Vgs (Max): ±12V
- Threshold Voltage: -500mV
- Vgs(th) (Max) @ Id: 1.2V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Resistance: 16.5mOhm
- Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V
- Rds On (Max) @ Id, Vgs: 16.5m Ω @ 7A, 4.5V
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