SI1029X-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI1029X-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      348669
    • Description：
      MOSFET N/P-CH 60V SOT563F
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    • Manufacturer No：
      SI1029X-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI1029X-T1-E3
    • SKU：
      348669
    • Description：
      MOSFET N/P-CH 60V SOT563F

    User Guide

    User Guide

    SI1029X-T1-E3 Details

    MOSFET N/P-CH 60V SOT563F

    SI1029X-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Min Operating Temperature: -55°C
    • Number of Pins: 6
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 60V
    • Max Power Dissipation: 250mW
    • Power - Max: 250mW
    • Max Operating Temperature: 150°C
    • Element Configuration: Single
    • Operating Temperature: -55°C~150°C TJ
    • Continuous Drain Current (ID): 500mA
    • Length: 1.7mm
    • Resistance: 4Ohm
    • Turn-Off Delay Time: 35 ns
    • FET Feature: Logic Level Gate
    • Series: TrenchFET?
    • Nominal Vgs: 2.5 V
    • Rds On Max: 3 Ω
    • Supplier Device Package: SC-89-6
    • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
    • Current - Continuous Drain (Id) @ 25°C: 305mA 190mA
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • Lead Free: Lead Free
    • Part Status: Obsolete
    • Termination: SMD/SMT
    • Drain to Source Voltage (Vdss): 60V
    • Dual Supply Voltage: 60V
    • Power Dissipation: 250mW
    • Threshold Voltage: 2.5V
    • Published: 2009
    • Gate to Source Voltage (Vgs): 20V
    • Height: 600μm
    • Width: 1.2mm
    • Turn On Delay Time: 20 ns
    • Drain to Source Resistance: 4Ohm
    • Input Capacitance: 30pF
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Package / Case: SOT-563, SOT-666
    • FET Type: N and P-Channel
    • Weight: 32.006612mg
    • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
    • Base Part Number: SI1029
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