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- Manufacturer No：SI5468DC-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI5468DC-T1-GE3
- SKU：348946
- Description：MOSFET N-CH 30V 6A 1206-8
User Guide
User Guide
SI5468DC-T1-GE3 Details
MOSFET N-CH 30V 6A 1206-8
SI5468DC-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- Drain Current-Max (Abs) (ID): 6A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Width: 1.65mm
- Fall Time (Typ): 10 ns
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn On Delay Time: 5 ns
- Series: TrenchFET?
- Resistance: 28mOhm
- Terminal Finish: PURE MATTE TIN
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
- Rds On (Max) @ Id, Vgs: 28m Ω @ 6.8A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Published: 2016
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Height: 1.1mm
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Length: 3.05mm
- Rise Time: 10 ns
- Turn-Off Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Power Dissipation: 2.3W
- Package / Case: 8-SMD, Flat Lead
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Weight: 84.99187mg
- Power Dissipation-Max: 2.3W Ta 5.7W Tc
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