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  • Manufacturer No:
    SI1013X-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    349716
  • Description:
    MOSFET P-CH 20V 350MA SC89-3
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  • Manufacturer No:
    SI1013X-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI1013X-T1-E3
  • SKU:
    349716
  • Description:
    MOSFET P-CH 20V 350MA SC89-3

SI1013X-T1-E3 Details

MOSFET P-CH 20V 350MA SC89-3

SI1013X-T1-E3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Power Dissipation: 250mW
  • Published: 2009
  • Drain to Source Voltage (Vdss): 20V
  • Gate to Source Voltage (Vgs): 6V
  • Technology: MOSFET (Metal Oxide)
  • Width: 939.8μm
  • FET Type: P-Channel
  • Resistance: 1.2Ohm
  • Fall Time (Typ): 11 ns
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
  • Package / Case: SC-89, SOT-490
  • Length: 1.6764mm
  • Power Dissipation-Max: 250mW Ta
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Continuous Drain Current (ID): -350mA
  • Supplier Device Package: SC-89-3
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Min Operating Temperature: -55°C
  • Number of Pins: 3
  • Max Operating Temperature: 150°C
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Height: 787.4μm
  • Turn-Off Delay Time: 35 ns
  • Turn On Delay Time: 5 ns
  • Drain to Source Resistance: 1.2Ohm
  • Series: TrenchFET?
  • Rise Time: 9ns
  • Rds On Max: 1.2 Ω
  • Vgs (Max): ±6V
  • Vgs(th) (Max) @ Id: 450mV @ 250μA (Min)
  • Current - Continuous Drain (Id) @ 25°C: 350mA Ta
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V

Excellent

Based on reviews

Excellent

Based on reviews

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